Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor deposition-Reference-Cited by-同舟云学术

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Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor deposition

Published:1992-07 Issue:4 Volume:10 Page:1920-1926
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Qian R.,Kinosky D.,Hsu T.,Irby J.,Mahajan A.,Thomas S.,Anthony B.,Banerjee S.,Tasch A.,Rabenberg L.,Magee C.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578116

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition;Frontiers in Materials;2020-03-18

2. HRTEM study of Si1−xGex multilayer;Thin Solid Films;1997-02

3. Control of deposition rate in remote plasma enhanced chemical vapor deposition of GexSi1−x/Si heteroepitaxial films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07

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