Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions-Reference-Cited by-同舟云学术

Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions

Published:2011-01 Issue:1 Volume:29 Page:011018
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Posseme N.,Bouyssou R.,Chevolleau T.,David T.,Arnal V.,Darnon M.,Brun Ph.,Verove C.,Joubert O.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3527073

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