Mechanism of selective SiO2/Si etching with fluorocarbon gases (CF4, C4F8) and hydrogen mixture in electron cyclotron resonance plasma etching system
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.580231
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3. Characteristics of SiO2 Etching by Capacitively Coupled Plasma with Different Fluorocarbon Liquids (C7F14, C7F8) and Fluorocarbon Gas (C4F8);Applied Science and Convergence Technology;2021-07-30
4. Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching;Journal of Vacuum Science & Technology A;2020-09
5. Concerning the Effect of Type of Fluorocarbon Gas on the Output Characteristics of the Reactive-Ion Etching Process;Russian Microelectronics;2020-05
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