Characteristics of SiO2 Etching by Capacitively Coupled Plasma with Different Fluorocarbon Liquids (C7F14, C7F8) and Fluorocarbon Gas (C4F8)-Reference-Cited by-同舟云学术

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Characteristics of SiO2 Etching by Capacitively Coupled Plasma with Different Fluorocarbon Liquids (C7F14, C7F8) and Fluorocarbon Gas (C4F8)

Published:2021-07-30 Issue:4 Volume:30 Page:102-106
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Yoo Seung-Wan¹,Cho Chulhee²³,Kim Kyungtae²,Lee Hyochang⁴,You Shinjae²³

Affiliation:

1. Memory Division, SAMSUNG Electronics, Hwasung 18448, Republic of Korea

2. Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea

3. Institute of Quantum System (IQS), Chungnam National University, Daejeon 34134, Republic of Korea

4. Advanced Instrumentation, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

Funder

National Research Council of Science & Technology

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://pdf.medrang.co.kr/ASCT/2021/030/ASCT030-04-03.pdf

Reference15 articles.

1. Warming Potential Reduction of C4F8Using Inductively Coupled Plasma

2. Difference between C4F8 and C5F8 plasmas in surface reaction processes for selective etching of SiO2 over Si3N4

3. Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist

4. Real-time multivariable control of PECVD silicon nitride film properties

5. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

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1. Characteristics of clean SiO2 atomic layer etching based on C6F6 physisorption;Applied Surface Science;2024-10

2. High aspect ratio SiO₂/SiN (ON) stacked layer etching using C₃HF₅, C₄H₂F₆, and C₄H₄F₆;Japanese Journal of Applied Physics;2024-06-03

3. Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6);Journal of Vacuum Science & Technology A;2024-04-16

4. Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction;Materials;2023-08-14

5. Phenomenological model for predicting C _x H _y F _z ⁺ ion etching yields of SiO₂ and SiN _x substrates;Japanese Journal of Applied Physics;2023-05-02

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