Angular etching yields of polysilicon and dielectric materials in Cl2∕Ar and fluorocarbon plasmas-Reference-Cited by-同舟云学术

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Angular etching yields of polysilicon and dielectric materials in Cl2∕Ar and fluorocarbon plasmas

Published:2008-01 Issue:1 Volume:26 Page:161-173
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Yin Yunpeng,Sawin Herbert H.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2821750

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features;Physics of Plasmas;2022-09

2. Roughness Evolution and Charging in Plasma-Based Surface Engineering of Polymeric Substrates: The Effects of Ion Reflection and Secondary Electron Emission;Micromachines;2018-08-19

3. The interplay between surface charging and microscale roughness during plasma etching of polymeric substrates;Journal of Applied Physics;2018-02-21

4. Modeling of the high aspect groove etching in Si in a Cl2/Ar mixture plasma;Russian Microelectronics;2016-05

5. Deep SiO2etching with Al and AlN masks for MEMS devices;Journal of Micromechanics and Microengineering;2015-07-22

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