Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition-Reference-Cited by-同舟云学术

Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

Published:2010-05 Issue:3 Volume:28 Page:473-477
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Lin Kung-Liang,Chang Edward-Yi,Hsiao Yu-Lin,Huang Wei-Ching,Luong Tien-Tung,Wong Yuen-Yee,Li Tingkai,Tweet Doug,Chiang Chen-Hao

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3385672

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1. Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate;Materials;2023-04-26

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3. Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire;Scientific Reports;2015-11-27

4. MOVPE growth of thick (∼1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells;Japanese Journal of Applied Physics;2015-07-21

5. Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures;Journal of Crystal Growth;2014-08