An investigation of CH4/H2 reactive ion etching damage to thin heavily doped GaAs metal–semiconductor field effect transistor layers during gate recessing
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reactive ion etching induced damage evaluation for optoelectronic device fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
2. Surface modification of (100) n-GaAs by radio frequency hydrogen plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
3. Influence of CH4/H2 reactive ion etching on the deep levels of Si-doped AlxGa1−xAs (x=0.25);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
4. Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs;Electronics Letters;1996
5. Atomic force microscopy investigations of dry etched gate recesses for InGaAs/InAlAs-based high-electron-mobility transistors using methane–hydrogen reactive ion etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11
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