Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs-Reference-Cited by-同舟云学术

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Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs

Published:1996 Issue:8 Volume:32 Page:770
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Cameron N.I.,Murad S.,McLelland H.,Asenov A.,Taylor M.R.S.,Holland M.C.,Beaumont S.P.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19960489?crawler=true&mimetype=application/pdf

Reference9 articles.

1. A study of wet chemical gate recess etching of pseudomorphic In0.15GaAs/GaAs HEMTS

2. A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETs

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study of gate recess-width control of InP-based HEMTs by a Si3N4 passivation layer;Microelectronic Engineering;2022-01

2. High power density AlGaAs/InGaAs/GaAs PHEMTs using an optimised manufacturing process for Ka-band applications;Microelectronic Engineering;2014-01

3. Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors;Journal of electromagnetic engineering and science;2013-06-30

4. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density;Semiconductors;2011-10

5. Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess;Applied Physics Letters;2010-05-17

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