Tantalum and tantalum nitride films deposited by electron cyclotron resonance sputtering as barriers to copper diffusion-Reference-Cited by-同舟云学术

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Tantalum and tantalum nitride films deposited by electron cyclotron resonance sputtering as barriers to copper diffusion

Published:1999 Issue:5 Volume:17 Page:2385
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ono Toshiro,Amazawa Takao,Nishimura Hiroshi,Matsuo Seitaro

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of tantalum oxy-nitrides deposited by ECR sputtering;Vacuum;2008-10

2. Characterization of Metal Insulator Metal Electrical Properties of Electron Cyclotron Resonance Plasma Deposited Ta2O5;Japanese Journal of Applied Physics;2006-09-22

3. Metal–Oxide–Semiconductor-Diode Characteristics with SiO2Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream;Japanese Journal of Applied Physics;2005-02-08

4. Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering;Japanese Journal of Applied Physics;2005-01-11

5. Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation;Japanese Journal of Applied Physics;2004-05-28

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