Metal–Oxide–Semiconductor-Diode Characteristics with SiO2Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
-
Published:2005-02-08
Issue:2
Volume:44
Page:1031-1036
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Saito Kunio,Jin Yoshito,Ono Toshiro,Shimada Masaru
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering