Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1−xMgxO3−δ;Japanese Journal of Applied Physics;2016-04-21
2. Silicon Oxide Surface Segregation in CO Oxidation on Pd: An in situ PEEM, MS and XPS Study;Catalysis Letters;2013-01-08
3. Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature;Japanese Journal of Applied Physics;2012-09-01
4. Thermal Improvement and Stability of Si$_{3}$N$_{4}$/GeN$_{x}$/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature;Japanese Journal of Applied Physics;2012-08-28
5. Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge;Journal of Applied Physics;2011-07-15
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