Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3610796
Reference11 articles.
1. <tex>$hbox Al_2hbox O_3$</tex>–Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates
2. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
3. Germanium p- and n-MOSFETs fabricated with novel surface passivation (plasma-PH/sub 3/ and thin AlN) and TaN/HfO/sub 2/ gate stack
4. Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of chemically stable GeO2 on the Ge surface with pulsed metal–organic chemical vapor deposition;Applied Physics Letters;2015-02-09
2. Electrical characteristics of ALD-deposited Al2O3thin films on p-type germanium substrates;physica status solidi (c);2012-11-29
3. Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature;Japanese Journal of Applied Physics;2012-09-01
4. Thermal Improvement and Stability of Si$_{3}$N$_{4}$/GeN$_{x}$/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature;Japanese Journal of Applied Physics;2012-08-28
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