Silicon etching in a direct current glow discharge of CF4/O2 and NF3/O2-Reference-Cited by-同舟云学术

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Silicon etching in a direct current glow discharge of CF4/O2 and NF3/O2

Published:1989-11 Issue:6 Volume:7 Page:1321
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Blom H.-O.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron transport parameters in NF3;Journal of Physics D: Applied Physics;2014-02-26

2. Effect of rare gas addition on deep trench silicon etch;Microelectronic Engineering;2004-09

3. Radical densities in fluorocarbon/O2 discharges—interpretation based on a simple plasma chemistry model;Applied Surface Science;2003-04

4. Dry Etching of SiC;Processing of Wide Band Gap Semiconductors;2000

5. Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-07

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