Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.580075
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1. Radical-controlled plasma processes;Reviews of Modern Plasma Physics;2022-11-10
2. Correlation of III/V semiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance;Plasma Science and Technology;2017-10-24
3. Formation of laser diode ridges by the dry-etching of Pd and AlGaN/GaN superlattices;Surface and Coatings Technology;2016-12
4. Dielectric Barrier Discharge Processing of trans-CF3CH=CHF and CF3C(O)CF(CF3)2, Their Mixtures with Air, N2, CO2 and Analysis of Their Decomposition Products;Plasma Chemistry and Plasma Processing;2015-07-09
5. Surface-Morphology-Induced Hydrophobicity of Fluorocarbon Films Grown by a Simultaneous Etching and Deposition Process;Journal of Electronic Materials;2015-04-17
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