Radical densities in fluorocarbon/O2 discharges—interpretation based on a simple plasma chemistry model
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference33 articles.
1. Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3
2. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
3. Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes
4. Model for the dry etching of heavily dopedn‐type silicon by atomic fluorine in the absence of ion bombardment
5. High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
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1. Kinetics of Polymer Surface Modification;The Plasma Chemistry of Polymer Surfaces;2012-04-17
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3. Generation and observation of CHF2, CF2, and CF3 in a CF4/He microwave discharge system: A mass spectrometric method;Chemical Physics Letters;2005-06
4. Pressure dependence of radical densities in various gas discharges;Applied Surface Science;2005-05
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