Process compatibility in integrated processing of semiconductor devices in multichamber systems-Reference-Cited by-同舟云学术

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Process compatibility in integrated processing of semiconductor devices in multichamber systems

Published:1991-05 Issue:3 Volume:9 Page:1066-1072
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lucovsky G.,Kim S. S.,Fitch J. T.,Wang Cheng,Rudder R. A.,Fountain G. G.,Hattangady S. V.,Markunas R. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.577578

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gas phase preparation and analysis of semiconductor surfaces in a clustered reactor apparatus;Review of Scientific Instruments;2006-09

2. A Far-Field-Viewing Sensor for Making Analytical Measurements in Remote Locations;Analytical Chemistry;1999-06-12

3. Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectrics;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

4. Integrated processing for microelectronics science and technology;IBM Journal of Research and Development;1992-03

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