Effect of lateral dimensional scaling on the thermal stability of thin CoSi[sub 2] layers reacted on polycrystalline silicon-Reference-Cited by-同舟云学术

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Effect of lateral dimensional scaling on the thermal stability of thin CoSi[sub 2] layers reacted on polycrystalline silicon

Published:2000 Issue:2 Volume:18 Page:717
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Alberti A.,La Via F.,Grimaldi M. G.,Ravesi S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Cobalt Films Deposited by Metal Organic Chemical Vapor Deposition Method Using Dicobalt Hexacarbonyltert-Butylacetylene;Japanese Journal of Applied Physics;2008-07-11

2. Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface;Applied Physics Letters;2002-07

3. Thermal stability of SiO[sub 2]/CoSi[sub 2]/polysilicon multilayer structures improved by cavity formation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

4. Improvement of CoSi2 thermal stability by cavity formation;Applied Physics Letters;2001-11-19

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