Improvement of CoSi2 thermal stability by cavity formation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1420785
Reference13 articles.
1. Formation of thin films of CoSi2: Nucleation and diffusion mechanisms
2. Interactions in the Co/Si thin‐film system. I. Kinetics
3. Nucleation of a new phase from the interaction of two adjacent phases: Some silicides
4. Reaction and thermal stability of cobalt disilicide on polysilicon resulting from a Si/Ti/Co multilayer system
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1. Phase and Composition Control of Ni Fully Silicided Gates by Nitrogen Ion Implantation and Double Ni Silicidation;Japanese Journal of Applied Physics;2008-04-25
2. CoSi[sub x] thermal stability on narrow-width polysilicon resistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
3. Effect of annealing on CoSi2 thin films prepared by magnetron sputtering;Materials Science and Engineering: B;2005-05
4. Reverse CoSi2Thermal Stability and Digitized Sheet Resistance Increase of Sub-90 nm Polysilicon Lines;Japanese Journal of Applied Physics;2005-04-21
5. Effect of Oxygen on the Diffusion of Nitrogen Implanted in Silicon;Electrochemical and Solid-State Letters;2004
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