Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1488697
Reference11 articles.
1. Thermal stability of thin CoSi[sub 2] layers on polysilicon implanted with As, BF[sub 2], and Si
2. Reaction and thermal stability of cobalt disilicide on polysilicon resulting from a Si/Ti/Co multilayer system
3. Effect of lateral dimensional scaling on the thermal stability of thin CoSi[sub 2] layers reacted on polycrystalline silicon
4. Oxygen and the thermal stability of thin CoSi2 layers
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1. Evaluation of Schottky barrier source/drain contact on gate-all-around polycrystalline silicon nanowire MOSFET;Materials Science in Semiconductor Processing;2017-04
2. Structure and property of magnetron sputtered ternary cobalt–nickel silicide films;Microelectronic Engineering;2010-10
3. Schottky Barrier Characteristics of Cobalt–Nickel Silicide/n-Si Junctions for Scaled-Si CMOS Applications;IEEE Transactions on Electron Devices;2008-09
4. Characteristics of DC magnetron sputtered ternary cobalt–nickel silicide thin films for ultra shallow junction devices;Microelectronic Engineering;2008-03
5. Effect of Oxygen on the Diffusion of Nitrogen Implanted in Silicon;Electrochemical and Solid-State Letters;2004
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