Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics-Reference-Cited by-同舟云学术

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Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics

Published:2011-01 Issue:1 Volume:29 Page:011027
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Katz E. J.,Zhang Z.,Hughes H. L.,Chung K. -B.,Lucovsky G.,Brillson L. J.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3543712

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular dynamics growth modeling of InAs1−xSbx-based type-II superlattice;Optical Engineering;2017-03-24

2. Fast kinetic Monte Carlo simulation and statistics of quantum dot arrays;Surface Science;2014-03

3. Process dependence of H passivation and doping in H-implanted ZnO;Journal of Physics D: Applied Physics;2013-01-04

4. Effect of β-cyclodextrin and Citric Acid on Chemical Mechanical Polishing of Polycrystalline Ge2Sb2Te5in H2O2Containing Slurry;ECS Journal of Solid State Science and Technology;2013

5. Control of Li configuration and electrical properties of Li-doped ZnO;Journal of Physics D: Applied Physics;2012-08-29

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