Process dependence of H passivation and doping in H-implanted ZnO-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Process dependence of H passivation and doping in H-implanted ZnO

Published:2013-01-04 Issue:5 Volume:46 Page:055107
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zhang Z,Look D C,Schifano R,Johansen K M,Svensson B G,Brillson L J

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=5/a=055107/pdf

Reference48 articles.

1. Recent advances in ZnO materials and devices

2. RETRACTED: Recent progress in processing and properties of ZnO

3. Residual Native Shallow Donor in ZnO

4. Native point defects in ZnO

5. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic study on the influence of post-processing annealing on ZnO films produced with a sol-gel method;Thin Solid Films;2024-01

2. Ion beam-induced defects in ZnO: A radiation hard metal oxide;Metal Oxide Defects;2023

3. The effect of H radicals on microstructure and electrical and optical properties of sputtered ZnO:Al films;AIP Advances;2021-03-01

4. Hydrogen in As‐Grown and Annealed ZnO Films Grown by Atomic Layer Deposition;physica status solidi (a);2020-11-04

5. Aerosol-assisted route to low-E transparent conductive gallium-doped zinc oxide coatings from pre-organized and halogen-free precursor;Chemical Science;2020

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3