Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition-Reference-Cited by-同舟云学术

Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition

Published:2018-01 Issue:1 Volume:36 Page:01A111
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Iwao Toshihiko¹,Ventzek Peter L. G.²,Upadhyay Rochan³,Raja Laxminarayan L.⁴,Ueda Hirokazu⁵,Ishibashi Kiyotaka¹

Affiliation:

1. S-Technology Development Center, Tokyo Electron Technology Solutions, Ltd., 650 Mitsuzawa, Hosaka-cho, Nirasaki City, Yamanashi 407-0192, Japan

2. Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78744

3. Esgee Technologies, Inc., 1301, S. Capital of Texas Hwy., Suite B-330, Austin, Texas 78746

4. Department of Aerospace Engineering and Engineering Mechanics, C0600, 210 East 24th Street, Austin, Texas 78712-1221

5. New Product Development Control Department, Tokyo Electron Technology Solutions, Ltd., 650 Mitsuzawa, Hosaka-cho, Nirasaki City, Yamanashi 407-0192, Japan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5003403

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