Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atmospheric-pressure plasma by remote dielectric barrier discharges for surface cleaning of large area glass substrates;Plasma Research Express;2019-02-20
2. Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films;Sensors and Actuators A: Physical;2015-04
3. Fundamental properties of a-SiNx:H thin films deposited by ICP-PECVD for MEMS applications;Applied Surface Science;2013-11
4. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider;Materials Chemistry and Physics;2011-12
5. Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure;ECS Transactions;2009-09-25
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