Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films-Reference-Cited by-同舟云学术

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Published:2015-04 Issue: Volume:224 Page:156-162
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Dergez D.,Schalko J.,Löffler S.,Bittner A.,Schmid U.

Funder

REA-Research Executive Agency

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference27 articles.

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3. Amorphous silicon and amorphous silicon nitride films prepared by a plasma-enhanced chemical vapor deposition process as optical coating materials;Tsai;Appl. Opt.,1993

4. Optimization of ICP-CVD silicon nitride for Si solar cell passivation;Sandeep,2012

5. Young's modulus of silicon nitride used in scanning force microscope cantilever;Khan;J. Appl. Phys.,2004

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