Author:
Matsumoto Mitsutaka,Ito Syun,Inayoshi Yohei,Murashige Shogo,Fukidome Hirokazu,Suemitsu Maki,Nakajima Setsuo,Uehara Tsuyoshi,Toyosihima Yasutake
Abstract
By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electrodes. This finding leads to a roll-to-roll-type deposition system of cleaning-free operation for film growth.
Publisher
The Electrochemical Society
Cited by
1 articles.
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