Atmospheric spatial atomic layer deposition of ZnOS buffer layers for flexible Cu(In,Ga)Se2 solar cells
Author:
Affiliation:
1. Solliance/TNO, High Tech Campus 21, 5656 AE Eindhoven, Netherlands
2. Flisom AG, Überlandstreass 129, CH-8600 Dübendorf, Switzerland
3. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, Netherlands
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5040457
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1. High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors;Japanese Journal of Applied Physics;2024-07-01
2. Effects of ZnSO4 concentration on the high-rate deposition of CBD-Zn(O,S) buffer layer for Cu(In,Ga)Se2 thin-film solar cells;Ceramics International;2024-01
3. Development of direct current magnetron sputtered TiO2−x thin films as buffer layers for copper indium gallium diselenide based solar cells;Thin Solid Films;2023-12
4. Atmospheric-pressure atomic layer deposition: recent applications and new emerging applications in high-porosity/3D materials;Dalton Transactions;2023
5. High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide);Advanced Materials Interfaces;2022-02-03
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