High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)
Author:
Affiliation:
1. TNO/Holst Centre High Tech Campus 31 Eindhoven 5656 AE The Netherlands
2. Department of Chemistry University of Bath Claverton Down Bath BA2 7AY UK
3. Applied Physics Eindhoven University of Technology Eindhoven 5600 MB The Netherlands
Funder
King Abdullah University of Science and Technology
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202101278
Reference51 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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3. Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects
4. Novel Multi-Level Cell TFT Memory With an In–Ga–Zn-O Charge Storage Layer and Channel
5. Recent Developments in p-Type Oxide Semiconductor Materials and Devices
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