Contacts on Si[sub 1−x−y]Ge[sub x]C[sub y] alloys: Electrical properties and thermal stability
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Published:1998-05
Issue:3
Volume:16
Page:1659
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
10 articles.
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1. Contact Metallization on Silicon–Ger manium;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13
2. Overview;Silicon Heterostructure Handbook;2005-11
3. Contact Metallization on Silicon–Germanium;Silicon Heterostructure Handbook;2005-11
4. Annealing of thin Zr films on Si 1−x Ge x (0≤ x ≤1): X-ray diffraction and Raman studies;Journal of Physics and Chemistry of Solids;2002-10
5. Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15;Journal of Electronic Materials;2002-05