Investigation of top gate GaN thin-film transistor fabricated by DC magnetron sputtering-Reference-Cited by-同舟云学术

Investigation of top gate GaN thin-film transistor fabricated by DC magnetron sputtering

Published:2018-05 Issue:3 Volume:36 Page:032203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Chen Rongsheng¹,Deng Sunbin²,Liu Yuan,Liu Yurong,Li Bin,Wong Man,Kwok Hoi-Sing

Affiliation:

1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China and State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

2. State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

Funder

National Key Technologies Research and Development Program

Partner State Key Lab on Advanced Displays and Optoelectronics Technologies

Science and Technology Program of Guangdong Province

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5021705

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