Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate-Reference-Cited by-同舟云学术

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Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate

Published:2020-12 Issue: Volume:148 Page:106722
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zainal N.,Samsudin M.E.A.,Md Taib M. Ikram,Ahmad M.A.,Shuhaimi A.

Funder

Universiti Sains Malaysia

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices, Jpn;Arakawa;J. Appl. Phys.,2017

2. Investigation of top gate GaN thin-film transistor fabricated by DC magnetron sputtering;Chen;J. Vac. Sci. Technol. B,2018

3. Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction;Lv;Appl. Surf. Sci.,2018

4. Performance of InGaN light-emitting diodes fabricated on patterned sapphire substrates with modified top-tip cone shapes;Hsueh;Int. J. Photoenergy,2014

5. Influence of ammonia flow rate for improving properties of polycrystalline GaN;Ariff;Superlattice. Microst.,2018

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of post-annealing technology on crystalline quality and properties of hexagonal boron nitride films deposited on sapphire substrates;Vacuum;2022-05

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