Better colloidal lithography: Tilt-rotate evaporation overcomes the limits of plasma etching

Author:

Caso MaCayla J.1ORCID,Benton Michael G.1ORCID,McPeak Kevin M.1ORCID

Affiliation:

1. Gordon and Mary Cain Department of Chemical Engineering, Louisiana State University, Baton Rouge, Louisiana, 70803

Abstract

Colloidal lithography (CL) is a promising method for large-area fabrication of nanohole and nanodot arrays with applications in optical biosensing, separations, and magnetic data storage. However, reducing the diameter of the polystyrene sphere mask by plasma etching unavoidably increases their coefficient of variation (CV) and deforms their shape, thereby limiting the pitch-to-hole-diameter ratio of the resulting nanohole array to less than 3:1 and the minimum hole size to 200 nm with a 10% or better CV. We show that tilt-rotate evaporation colloidal lithography (TRE-CL) breaks the trade-off between hole diameter and polydispersity by leveraging glancing angle evaporation, not plasma etching, to adjust the hole size. TRE-CL allows pitch-to-hole-diameter ratios as high as 7:1 and nanohole diameters down to 60 nm while maintaining a nearly constant CV below 10% and hole circularity above 91%. We transfer these hole arrays into ultrathin Si3N4 films to form nearly-monodisperse microsieves for separation applications. Furthermore, we extend TRE-CL to fabricate adhesion-layer-free plasmonic Au nanodot arrays down to 70 nm in diameter with 10% CV.

Funder

Louisiana Board of Regents

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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