Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Dennard, R. H., Gaensslen, F. H., Rideout, V. L., Bassous, E. & LeBlanc, A. R. Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J. Solid-State Circuits 9, 256–268 (1974).
2. Moore, G. Moore’s law. Electronics 38, 114 (1965).
3. Hahn, P. O. The 300 mm silicon wafer—a cost and technology challenge. Microelectron. Eng. 56, 3–13 (2001).
4. Hills, G. et al. Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI. IEEE Trans. Nanotechnol. 17, 1259–1269 (2018).
5. Aly, M. M. S. et al. Energy-efficient abundant-data computing: the N3XT 1,000X. Computer 48, 24–33 (2015).
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