Photoinduced carrier transport mechanism in <i>pn</i>- and <i>nn</i>-GaN/GaON heterojunctions-Reference-Cited by-同舟云学术

Photoinduced carrier transport mechanism in pn- and nn-GaN/GaON heterojunctions

Published:2022-01 Issue:1 Volume:40 Page:012204
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Sun Xiaojun¹,Wu Chao¹,Wang Yachao¹,Guo Daoyou¹^ORCID

Affiliation:

1. Center for Optoelectronics Materials and Devices and Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Science Foundation of Zhejiang Sci-Tech University

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001601

Reference36 articles.

1. High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process

2. High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

3. An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures

4. Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge-Carrier Engineering

5. Anion Engineering Enhanced Response Speed and Tunable Spectral Responsivity in Gallium-Oxynitrides-Based Ultraviolet Photodetectors

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