Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4-Reference-Cited by-同舟云学术

Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4

Published:2017-01 Issue:1 Volume:35 Page:011206
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Hays David C.¹,Gila Brent P.¹,Pearton Stephen J.¹,Trucco Andres²,Thorpe Ryan³,Ren Fan⁴

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

2. Nanoscale Research Facility, University of Florida, Gainesville, Florida 32611

3. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854

4. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

Funder

National Science Foundation (NSF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://aip.scitation.org/doi/pdf/10.1116/1.4973882

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