Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3-Reference-Cited by-同舟云学术

Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3

Published:2018-11 Issue:6 Volume:36 Page:061207
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Fares Chaker¹,Ren F.¹,Lambers Eric²,Hays David C.²,Gila B. P.²,Pearton S. J.³

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

2. Nanoscale Research Facility, University of Florida, Gainesville, Florida 32611

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Funder

Defense Threat Reduction Agency

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5052620

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of substrates on the structural, surface chemical state, and optical properties of Ga-doped Al2O3 thin films;Optical Materials;2024-09

2. β-Ga2O3 orientation dependence of band offsets with SiO2 and Al2O3;Journal of Vacuum Science & Technology A;2023-09-22

3. Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (Al_xGa_1–x)₂O₃ Films Using Trimethylgallium;physica status solidi (RRL) – Rapid Research Letters;2023-08-06

4. The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1−x)2O3 Intermediate Buffer Layer;Materials;2023-03-30

5. The morphology and magnetic properties of iron nanoclusters decorated multiwall carbon nanotubes;Materials Research Bulletin;2023-02