Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching-Reference-Cited by-同舟云学术

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Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching

Published:2000 Issue:4 Volume:18 Page:1906
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Jonsson L. B.,Westlinder J.,Engelmark F.,Hedlund C.,Du J.,Smith U.,Blom H.-O.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Anisotropic Ta2O5 waveguide etching using inductively coupled plasma etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-07

3. Improvement of electrical and optical properties of molybdenum oxide thin films by ultralow pressure sputtering method;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-05

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