Electronic properties of deep levels in p‐type CdTe-Reference-Cited by-同舟云学术

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Electronic properties of deep levels in p‐type CdTe

Published:1983-07 Issue:3 Volume:1 Page:1633-1636
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Collins R. T.,McGill T. C.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.572245

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor (CdSe and CdTe)quantum dot: Synthesis, properties and applications;Materials Today: Proceedings;2022

2. Study of barrier height and trap centers of Au/n-Hg3In2Te6 Schottky contacts by current-voltage (I-V) characteristics and deep level transient spectroscopy;Journal of Applied Physics;2015-02-28

3. Impurities and Defects;Device Physics of Narrow Gap Semiconductors;2009-08-28

4. A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals;Semiconductors;2002-12

5. Optical properties and annealing effects on the deep levels in As-doped CdTe/Cd0.96Zn0.04Te (211) B heterostructures;Journal of Materials Research;2000-03

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