Study of barrier height and trap centers of Au/n-Hg3In2Te6 Schottky contacts by current-voltage (I-V) characteristics and deep level transient spectroscopy-Reference-Cited by-同舟云学术

Study of barrier height and trap centers of Au/n-Hg3In2Te6 Schottky contacts by current-voltage (I-V) characteristics and deep level transient spectroscopy

Published:2015-02-28 Issue:8 Volume:117 Page:085704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Yapeng¹,Fu Li¹,Sun Jie¹,Wang Xiaozhen¹

Affiliation:

1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Funder

Fund of Ministry of Education for Doctor

Program of Introducing Talents of Discipline to University

Project of Key Areas of Innovation Team in Shaanxi Province

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913450

Reference58 articles.

1. Electrical performance of hgInTe surface-barrier photodiodes

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of thermal annealing on the electronic parameters of Al/p-Si/Cu double Schottky barrier heights;Physica B: Condensed Matter;2023-05

2. Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface;Physica Scripta;2022-08-24

3. Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode;Journal of Electronic Materials;2021-06-11

4. Analysis of the carrier transport mechanism and barrier height formation of graphene/Zr–ZnO Schottky contact by I-V-T;Materials Science in Semiconductor Processing;2020-02

5. Analysis on the temperature dependent electrical properties of graphene/Al–ZnO Schottky contact;Current Applied Physics;2019-10