Temperature dependent defect formation and charging in hafnium oxides and silicates-Reference-Cited by-同舟云学术

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Temperature dependent defect formation and charging in hafnium oxides and silicates

Published:2005 Issue:1 Volume:23 Page:201
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lim D.,Haight R.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid-state reactions at niobium–germanium interfaces in hybrid quantum electronics;AIP Advances;2024-09-01

2. Iron oxide induced effects on the electrochemical stability and specific capacity of hafnium oxide electrode for supercapacitor applications;Journal of Energy Storage;2023-12

3. WSe2 growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe2 growth conditions on the ferroelectric properties of HZO;2D Materials;2021-10-21

4. Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides;Applied Surface Science;2021-04

5. Electronic structure of technologically important interfaces and heterostructures;MRS Communications;2020-12

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