Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing
Author:
Affiliation:
1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik 1 , Gustav-Kirchhoff-Straße 4, Berlin 12489, Germany
2. Leibniz-Institut für Kristallzüchtung (IKZ) 2 , Max-Born-Str. 2, Berlin 12489, Germany
Abstract
Funder
Bundesministerium für Bildung und Forschung
Leibniz-ScienceCampus GraFOx
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/6.0002642/17790874/043102_1_6.0002642.pdf
Reference44 articles.
1. β-Gallium oxide power electronics
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3. A review of Ga2O3materials, processing, and devices
4. Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
5. Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
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