Photoreflectance study of Hg0.7Cd0.3Te and Cd1−xZnxTe: E1 transition-Reference-Cited by-同舟云学术

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Photoreflectance study of Hg0.7Cd0.3Te and Cd1−xZnxTe: E1 transition

Published:1986-07 Issue:4 Volume:4 Page:2028-2033
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Amirtharaj P. M.,Dinan J. H.,Kennedy J. J.,Boyd P. R.,Glembocki O. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574021

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The behavior of the surface charge density in HgxCd1−xTe epilayers due to hydrogenation and annealing;Applied Surface Science;1996-10

2. Reflectance and photoreflectance for in-situ monitoring of the molecular beam epitaxial growth of CdTe and Hg-based materials;Journal of Electronic Materials;1995-05

3. Optical characterization in microelectronics manufacturing;Journal of Research of the National Institute of Standards and Technology;1994-09

4. Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices;Materials Science and Engineering: R: Reports;1993-10

5. Review of semiconductor microelectronic test structures with applications to infrared detector materials and processes;Semiconductor Science and Technology;1993-06-01

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