Review of semiconductor microelectronic test structures with applications to infrared detector materials and processes-Reference-Cited by-同舟云学术

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Review of semiconductor microelectronic test structures with applications to infrared detector materials and processes

Published:1993-06-01 Issue:6S Volume:8 Page:888-910
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kopanski J J,Schuster C E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=6S/a=009/pdf

Reference151 articles.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping and temperature dependence of minority carrier diffusion lengths in InGaAs/InP photodiodes;2019 IEEE SENSORS;2019-10

2. Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications;Infrared Technology and Applications XLIII;2017-02-22

3. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors;Journal of Electronic Materials;2016-06-07

4. Isolating surface and bulk contributions in an HgCdTe junction diode;SPIE Proceedings;2003-09-30

5. A general relation between zero-bias resistance - area product and perimeter-to-area ratio of the diodes in variable-area diode test structures;Semiconductor Science and Technology;1996-07-01

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