Highly conductive silicon films via plasma‐enhanced chemical vapor deposition at low temperatures
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.578513
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Deposition of Intrinsic and Doped Semiconductor Thin Films for a-Si:H TFT;Thin Film Transistors;2004
2. Deposition of Highly Conductive n+ Silicon Film for a-Si:H Thin Film Transistor;MRS Proceedings;1998
3. Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped n+silicon film;Applied Physics Letters;1997-11-10
4. Very high (>1019 cm−3)in situn-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine;Applied Physics Letters;1997-03-03
5. Preparation of highly conductive p-type μc-Si:H window layer using lower concentration of hydrogen in the rf glow discharge plasma;Solar Energy Materials and Solar Cells;1997-02
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