Very high (>1019 cm−3)in situn-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119074
Reference14 articles.
1. Evaporative antimony doping of silicon during molecular beam epitaxial growth
2. Arbitrary doping profiles produced by Sb‐doped Si MBE
3. Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si1−xGexusing phosphine
4. Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon System
5. In situ doping of Si and Si1−xGex in ultrahigh vacuum chemical vapor deposition
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si[sub 1−x]C[sub x] Epitaxy from Disilane, Trimethylsilane, and Phosphine;Journal of The Electrochemical Society;2010
2. Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition;Journal of The Electrochemical Society;2000
3. Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth;Critical Reviews in Solid State and Materials Sciences;1998-12
4. Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-11
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