Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones-Reference-Cited by-同舟云学术

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Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones

Published:2019-03 Issue:2 Volume:37 Page:021004
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Konh Mahsa¹,He Chuan¹,Lin Xi¹,Guo Xiangyu²,Pallem Venkateswara²,Opila Robert L.¹³,Teplyakov Andrew V.¹,Wang Zijian³,Yuan Bo¹

Affiliation:

1. Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716

2. American Air Liquide, Delaware Innovation Campus, 200 GBC Drive, Newark, Delaware 19702

3. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716

Funder

Division of Materials Research

Division of Chemistry

National Institute of General Medical Sciences

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5082187

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4. Thermal Atomic Layer Etching of Gold Using Sulfuryl Chloride for Chlorination and Triethylphosphine for Ligand Addition;Chemistry of Materials;2024-05-13

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