Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition-Reference-Cited by-同舟云学术

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Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition

Published:2005 Issue:3 Volume:23 Page:1024
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kao C. J.,Kwon Yong Wook,Heo Y. W.,Norton D. P.,Pearton S. J.,Ren F.,Chi G. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Enhancement of ZnGa₂O₄ Metal Oxide-Semiconductor Field-Effect Transistors Grown via Metal Organic Chemical Vapor Deposition on Sapphire Substrates;ACS Applied Electronic Materials;2024-07-16

2. Stability and process parameter optimization for a vertical rotating ZnO-MOCVD reaction chamber;Vacuum;2018-03

3. Review of II-VI Based Compounds for Transistor Applications;Reference Module in Materials Science and Materials Engineering;2018

4. High-Performance Depletion-Mode Multiple-Strip ZnO-Based Fin Field-Effect Transistors;IEEE Transactions on Electron Devices;2016-01

5. ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer;Journal of Electronic Materials;2015-10-08

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