The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.575896
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Morphological investigations of solid solutions (GaAs)<sub>1-x</sub>(ZnSe)<sub>x</sub> doped with < Sb >;Functional Materials;2023-06-27
2. Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy;Applied Physics Letters;2004-05-03
3. Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. Photoluminescence study of Al doping in GaAs grown by molecular‐beam epitaxy;Journal of Applied Physics;1996-11-15
5. Influence of Al Doping on Deep Levels in MBE GaAs;Materials Science Forum;1995-11
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