Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy

Published:2004 Issue:3 Volume:22 Page:1436
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Johnson S. R.,Sadofyev Yu. G.,Ding D.,Cao Y.,Chaparro S. A.,Franzreb K.,Zhang Y.-H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant;Quantum Sensing and Nano Electronics and Photonics XV;2018-01-26

2. Insight into the epitaxial growth of high optical quality GaAs1–xBix;Journal of Applied Physics;2015-12-21

3. Investigation of MBE-grown InAs1−Bi alloys and Bi-mediated type-II superlattices by transmission electron microscopy;Journal of Crystal Growth;2015-09

4. Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03

5. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2012-11-17

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