High reflectance of reflective-type attenuated-phase-shifting masks for extreme ultraviolet lithography with high inspection contrast in deep ultraviolet regimes-Reference-Cited by-同舟云学术

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High reflectance of reflective-type attenuated-phase-shifting masks for extreme ultraviolet lithography with high inspection contrast in deep ultraviolet regimes

Published:2004 Issue:6 Volume:22 Page:3049
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chen H. L.,Cheng H. C.,Ko T. S.,Ko F. H.,Chu T. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SCAPSM: attenuated phase-shift mask structure for EUV lithography;Applied Optics;2024-03-14

2. Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-08-11

3. Attenuated PSM for EUV: Can they mitigate 3D mask effects?;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

4. Binary mask designs with single- and double-layer absorber stacks for extreme ultraviolet lithography and actinic inspection;Applied Optics;2013-11-06

5. Determination of Optical Constants of Thin Films in Extreme Ultraviolet Wavelength Region by an Indirect Optical Method;Journal of the Optical Society of Korea;2013-02-25

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