Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose-Reference-Cited by-同舟云学术

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Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose

Published:2000 Issue:6 Volume:18 Page:3177
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ruchhoeft P.,Wolfe J. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Helium-ion-beam nanofabrication: extreme processes and applications;International Journal of Extreme Manufacturing;2021-01-05

2. Image noise in helium lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-07

3. Size Distribution and Anisotropy Effects on the Switching Field Distribution of Co/Pd Multilayered Nanostructure Arrays;IEEE Transactions on Magnetics;2009-10

4. Close-Packed Noncircular Nanodevice Pattern Generation by Self-Limiting Ion-Mill Process;Nano Letters;2007-08-29

5. Rapid prototyping of infrared bandpass filters using aperture array lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005

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